Michael Nastasi James W. Mayer Nastasi Ion Implantation and Synthesis of Materials

Ion Implantation and Synthesis of Materials

von Michael Nastasi James W. Mayer

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Beschreibung

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Presents the basics and current state of the art in the field of ion implantation-based materials physics Includes supplementary material: sn.pub/extras

Autor*in

Michael Nastasi

Themen in »Ion Implantation and Synthesis of Materials«

Diffusion Doping Implanted shallow junctions Ion implantation Ion ranges Ion-modified materials Slicing silicon crystal distribution materials properties materials science

Stimmen zu »Ion Implantation and Synthesis of Materials«

Details

ISBN: 9783540236740
Verlag: Springer Berlin
Erscheinung: 09.08.2006

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