Huff High Dielectric Constant Materials

High Dielectric Constant Materials

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VLSI MOSFET Applications

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Beschreibung

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.


Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.


High-dielectric-constant materials have a huge potential for applications in microelectronic devices. This book provides the most comprehensive survey on their properties, processing and applications Includes supplementary material: sn.pub/extras

Autor*in

Howard Huff

Themen in »High Dielectric Constant Materials«

CMOS Leistungsfeldeffekttransistor Technologie VLSI circuit dielectrics electronic structure field-effect transistor history integrated circuit material metal oxide semiconductur field-effect transistor semiconductor silicon transistor

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Details

ISBN: 9783540210818
Verlag: Springer Berlin
Erscheinung: 30.09.2004

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