Impurities and Defects in Group IV Elements and III-V Compounds / Störstellen und Defekte in Elementen der IV. Gruppe und III-V-Verbindungen

Beschreibung

Subvolume III/22b of the Landolt-Börnstein New Series presents a comprehensive data compilation on defects and impurities in the elemental semiconductors and in the III-V compounds. Data on semiconductor defects were already included in the extended data collection on semiconductors in volumes III/17a...i. Research on semiconductor defects and impurities, however, advanced so rapidly during recent years that a new subvolume on this important topic seemed desirable. The information given in subvolume III/22b ranges from trends on defect properties as predicted by theory and a survey of diagnostic techniques to extensive tables and graphical representations of defect properties. The editor and the authors have endeavoured to find a unified form and to critically select the important and reliable information from the wide range of published data. Discussions of ambiguous results or textbook style explanations are avoided.

Autor*in

C.A.J. Ammerlaan

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