The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They also deal with the properties and processes for thermal, optical and electrical systems, as well as magnetism and magnetic properties and spin-based device concepts. The result is a lucid presentation of the necessary basics of semiconductor and device physics and engineering, backed by an extensive reference section.
Volume 2 is devoted to mainly the electrical and optical properties of nitride materials and metal-semiconductor contacts and p-n junctions. Both intrinsic and extrinsic, the latter due to defects, current conduction mechanisms in both types of structures are discussed. Detailed discussion and the theory behind carrier transport and scattering low and high electric fields, and low and high magnetic fields are given. Finally, the details of optical processes, both linear and non linear, in GaN and associated reduced dimensional structures backed by fundamentals are provided.
Die Forschung zu Gallium-Nitriden (GaN) und ihnen ähnlichen Verbindungen bzw. zu Halbleiterelementen hat sich in den letzten Jahren rasant entwickelt. Dieser zweite Band des dreibändigen Handbuches widmet sich optischen und elektronischen Eigenschaften von Nitrid-Materialien.
Hadis Morkoc
Electrical & Electronics Engineering Elektrotechnik u. Elektronik Halbleiter Halbleiterphysik Physics Physik Semiconductor Physics Semiconductors