Handbook of Nitride Semiconductors and Devices / Handbook of Nitride Semiconductors and Devices

Beschreibung

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They also deal with the properties and processes for thermal, optical and electrical systems, as well as magnetism and magnetic properties and spin-based device concepts. The result is a lucid presentation of the necessary basics of semiconductor and device physics and engineering, backed by an extensive reference section. Volume 1 covers the properties and growth of GaN, discussing the deposition methods hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. In addition, it reviews extended defects and their electrical nature, point defects, and doping.
Dieser erste Band geht auf Eigenschaften und Wachstumsverhalten von Gallium-Nitriden unter Berücksichtigung von ausgedehnten Defekten, Punktdefekten und Dotierung ein. Ein Schwerpunkt liegt auf den Abscheidungsmethoden VPE, CVD und MBE und Wachstum unter Hochdruckbedingungen.

Autor*in

Hadis Morkoc

Themen in »Handbook of Nitride Semiconductors and Devices / Handbook of Nitride Semiconductors and Devices«

Electrical & Electronics Engineering Elektrotechnik u. Elektronik Halbleiter Halbleiterphysik Physics Physik Semiconductor Physics Semiconductors

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