The objective of the International Workshop on Nitride Semiconductors (IWN 2004), held in Pittsburgh, Pennsylvania, USA, 19-23 July 2004 was to provide a forum for researchers to present their latest findings in a workshop environment, stimulating meaningful debate, enabling in-depth technical discussions, and allowing significant exchange of knowledge. Topics ranged from fundamental science to the latest in device-design architecture and processing-related issues. Areas covered were epitaxial growth, substrates, defects and doping, interface physics, optical and electrical characterization, quantum structures, and devices.
Joan Redwing