Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Beschreibung

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

• Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
  
• Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
  
• Enables design of smaller, cheaper and more efficient power supplies.

Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the device level to circuit level, both for drivers and power conversions architectures

Demonstrates how GaN may be a superior technology for switching devices, enabling both high frequency and high efficiency power conversion

Enables design of smaller and more efficient power supplies

Autor*in

Gaudenzio Meneghesso

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Gallium Nitride GaN device physics GaN for Power Conversion GaN transistors GaN Reliability

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