Epitaxial Growth of III-Nitride Compounds
Computational Approach
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Beschreibung
This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
Addresses all theoretical/computational aspects of the growth of III-nitride in a single comprehensive work Also discusses the underlying scientific principles Illustrates how the amount of experimental effort can be reduced with appropriate simulations
Addresses all theoretical/computational aspects of the growth of III-nitride in a single comprehensive work Also discusses the underlying scientific principles Illustrates how the amount of experimental effort can be reduced with appropriate simulations
Autor*in
Takashi Matsuoka
Themen in »Epitaxial Growth of III-Nitride Compounds«
Fundamental Growth Processes III-Nitride Semiconductors Dislocation Core Structure Adsorption-Desorption Behaviour Nonpolar and Semipolar Orientations Surface Phase Diagram Empirical Interatomic Potentials Monte Carlo Simulations