Emerging Resistive Switching Memories
Buch in deiner Nähe kaufen
Beschreibung
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
Details how charge trapping can occur on nanoparticles and at interface between bulk metal and metal nanoparticles Explains how charge transfer can lead to resistive switches Demonstrates how conductive filaments are formed and cause resistive switches Describe how devices with resistive switches can be used as memory devices Provides a comprehensive overview of nanoparticles, donor-acceptor materials, oxides, one- and two-dimensional nanomaterials for the fabrication and characterization of memory devices and mechanisms for resistive switches
Autor*in
Jianyong Ouyang
Themen in »Emerging Resistive Switching Memories«
Bistable devices Charge trapping Fabrication of novel non-vole. rest. random-access mem. Memory device nanoparticles Memristor devices Neuromorphic memories Nonvolatile memories RRAM Resistive switching Transition metal oxide