The 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM)
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Beschreibung
Selected peer-reviewed extended articles based on abstracts presented at the 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM 2025)
Aggregated Book
This book aims to provide a comprehensive overview of the latest breakthroughs in Silicon Carbide (SiC) and related materials for the development of advanced solid-state electronics. Its scope systematically covers the entire semiconductor value chain, beginning with bulk and epitaxial growth, followed by rigorous defect evaluation and material characterization. Furthermore, the compiled research highlights critical advancements in dielectrics, interface engineering, and the design of high-performance SiC power devices. Reflecting the expanding horizons of the field, the content also explores emerging SiC-based quantum applications alongside thorough assessments of power module robustness and reliability. Ultimately, this collection serves as an essential resource for researchers and engineers dedicated to driving innovation in wide-bandgap semiconductors. All articles compiled in this edition were presented at the 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM, 14–19 September 2025, Busan, Korea).
Autor*in
Trans Tech Publications Ltd
Themen in »The 22nd International Conference on Silicon Carbide and Related Materials (ICSCRM)«
Basal Plane Dislocation Carrier Lifetime Defect Degradation Epilayer Epitaxial Growth Gate Oxide Interface Ion Implantation Irradiation JBS Laser Processing Laser Slicing Metrology Micropipe