Gettering and Defect Engineering in Semiconductor Technology X
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Beschreibung
GADEST 2003
Proceedings of the 10th International Autumn Meeting on Gettering anf Defect Engineering in Semiconductor Technology, September 21-26, 2003, Brandenburg, Germany
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
Autor*in
Trans Tech Publications Ltd
Themen in »Gettering and Defect Engineering in Semiconductor Technology X«
Copper (Cu) Czochralski Silicon Dislocation DLTS EBIC Gettering Grain Boundary Helium Hydrogen Hydrostatic Pressure Implantation Ion Implantation Iron Multicrystalline Silicon Nitrogen