Defects and Diffusion in Semiconductors III
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Beschreibung
An Annual Retrospective III
The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.
Autor*in
Trans Tech Publications Ltd
Themen in »Defects and Diffusion in Semiconductors III«
Carbon Defect Diffusion Dislocation Dipoles DLTS Electron Irradiation Energy Levels Etching In-Diffusion InGaAs Ion Implantation MOVPE Point Defect Precipitation Reactive Ion Etching