Defects and Diffusion in Semiconductors II
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Beschreibung
An Annual Retrospective II
This second volume in the new-format coverage of the latest results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series.
Autor*in
Trans Tech Publications Ltd
Themen in »Defects and Diffusion in Semiconductors II«
Diffusion Profiles Immobile Dopants In-Diffusion Infrared Spectroscopy Interstitial Vacancy Mechanism Irradiation Isotope Effect Lattice Dynamics Calculations Localised Vibrational Modes Oxygen Impurity Predoping Reaction-Diffusion Equations