Ultra Clean Processing of Silicon Surfaces IV
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Beschreibung
Proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98), held in Ostend, Belgium, September 1998
The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).
Autor*in
Trans Tech Publications Ltd
Themen in »Ultra Clean Processing of Silicon Surfaces IV«
Atomic Force Microscope (AFM) Cleaning CMP Contamination HF Impurity Metal Contamination Ozone Particle Photoresist Plasma Etching Post-Etch Residue Removal Residue SC-1 Silicon