Proceedings of the 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98), held in Parkhotel Schloss Wulkow near Berlin, Germany, August/September 1998
The 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98) focussed on many theoretical and experimental aspects of this topic. The aim was to bring together specialists working in the fields of both fundamental research and applications. There were more than 80 participants from 15 countries all over the world.
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Atomic Force Microscope (AFM) Cathodoluminescence Diffusion Length Dislocation DLTS EBIC Electron Beam Induced Current (EBIC) Gallium Nitride (GaN) Hydrogen Passivation II-VI Compounds LBIC Minority Carriers Photoluminescence (PL)