Diffusion in GaAs and other III-V Semiconductors

Beschreibung

10 Years of Research

The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information.

Autor*in

Trans Tech Publications Ltd

Themen in »Diffusion in GaAs and other III-V Semiconductors«

Anisotropic Nucleation Anneal Capture Barriers Charge-State Controlled Stability Deep Donor Levels Deep Impurity Deep Level Transient Spectroscopy Ion Implantation Multiple Quantum Wells Photoluminescence (PL)

Stimmen zu »Diffusion in GaAs and other III-V Semiconductors«

Details

Link teilen