Gettering and Defect Engineering in Semiconductor Technology VII
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Beschreibung
GADEST 1997
Proceedings of the 7th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '97), Spa, Belgium, October 1997
Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.
Autor*in
Trans Tech Publications Ltd
Themen in »Gettering and Defect Engineering in Semiconductor Technology VII«
Annealing Deep Level Defect Dislocation DLTS Gettering Grown-in Defects Ion Implantation Nucleation Oxygen Oxygen Precipitates Oxygen Precipitation Photoluminescence (PL) Point Defect Precipitation