Band Tailings and Deep Defects in Semiconductors

Beschreibung

The present textbook treats the effects of temperature upon weakly disordered hydrogenated amorphous silicon and hydrogenated amorphous germanium, as well as the effect of weak disorder upon more complex systems such as GaAs and Al2Gal-xAs alloy. The effects of disorder-induced band tailing upon deep levels in compound semiconductor alloys are also studied.

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Trans Tech Publications Ltd

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Activation Energy Band Tailings Deep Defects Hydrogenated Amorphous Germanium (a-Ge:H) Hydrogenated Amorphous Silicon Semiconductors

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