Gettering and Defect Engineering in Semiconductor Technology VI
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Beschreibung
GADEST 1995
Proceedings of the 6th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '95) held in Berlin, Germany, September 1995
At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC.
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Trans Tech Publications Ltd
Themen in »Gettering and Defect Engineering in Semiconductor Technology VI«
Crystal Growth Semiconductors Silicon Carbide Silicon Technology Wafer Bonding