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Beschreibung

Donors in AlGaAs and Related Compounds


During the last 25 years, the behavior of donors in III-V alloys has been the subject of a very extensive research effort. The research emphasis on AlGaAs compounds is motivated by the industrial importance of AlGaAs/GaAs heterojunction based devices. As seeing it now, "the DX center problem", the behavior of donors in III-V alloys, has shown to be unexpectedly difficult to understand. To determine the microscopic nature of the DX center is still a challenging problem.


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Trans Tech Publications Ltd

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Aluminium Gallium Arsenide DX Centers III-V Alloys Photoluminescence Properties Semiconductors

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Details

ISBN: 9783035706536
Verlag: Trans Tech
Erscheinung: 02.02.1994

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