Silicon Carbide and Related Materials 2003
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Beschreibung
ICSCRM 2003
Proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Autor*in
Trans Tech Publications Ltd
Themen in »Silicon Carbide and Related Materials 2003«
3C-SiC 4H-SiC 6H-SiC Breakdown Voltage Chemical Vapor Deposition (CVD) Defect Dislocation DLTS Edge Termination Gallium Nitride (GaN) Interface States (or Traps) Ion Implantation Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Micropipe