Silicon Carbide and Related Materials 2001
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Beschreibung
ICSCRM 2001
Wide-bandgap semiconductors such as silicon carbide (SiC) and group-III Nitrides have attracted increasing attention as favored materials short-listed for use in new electronic devices; especially those destined for high-power, high-frequency and/or high-temperature applications, as well as short-wavelength light-emitters. This two-volume set contains >illustrated transcripts of papers presented at the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), held in the Fall of 2001 at Tsukuba, Japan. This timely conference was held in the very first year of the 21st century; an era in which SiC devices are going to find a real market. More than 500 contributors; both academic scientists and device engineers, from 20 countries, discussed and exchanged ideas extensively during the five days of the conference.
Autor*in
Trans Tech Publications Ltd
Themen in »Silicon Carbide and Related Materials 2001«
3C-SiC 4H-SiC 6H-SiC Breakdown Voltage Chemical Vapor Deposition (CVD) Defect Heteroepitaxy Interface States (or Traps) Ion Implantation MESFET Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Micropipe MOS Ohmic Contact Oxidation