Defects in Semiconductors 19
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Beschreibung
Proceedings of the 19th International Conference on Defects in Semiconductors (ICDS-19), Aveiro, Portugal, July 1997
Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Autor*in
Trans Tech Publications Ltd
Themen in »Defects in Semiconductors 19«
Defect Diffusion Dislocation DLTS Electron Irradiation Erbium GaAs Gallium Nitride (GaN) Hydrogen Ion Implantation Luminescence Oxygen Passivation Photoluminescence (PL) Positron Annihilation