Defects in Semiconductors 18
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Beschreibung
Proceedings of the 18th International Conference on Defects in Semiconductors (ICDS-18), Sendai, Japan, July 1995
The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Autor*in
Trans Tech Publications Ltd
Themen in »Defects in Semiconductors 18«
Carbon Defect Diffusion Dislocation DLTS DX Centers Electron Irradiation GaAs Gallium Nitride (GaN) Hydrogen InP Ion Implantation Oxygen Photoluminescence (PL) Point Defect