Defects in Semiconductors 17
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Beschreibung
Proceedings of the 17th International Conference on Defects in Semiconductors (ICDS-17), Gmunden, Austria, July 1993
This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.
Autor*in
Trans Tech Publications Ltd
Themen in »Defects in Semiconductors 17«
Deep Level Defect Diffusion DLTS DX Center DX Centers Electron Irradiation EPR GaAs Hydrogen InP Ion Implantation Luminescence Metastability ODMR