Nanoscale Semiconductor Devices
Materials, Modeling, and Circuit Integration
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Beschreibung
This book offers a comprehensive exploration of the design and technology of nanoscale semiconductor devices, with a special focus on novel materials and structures that address the limitations of conventional silicon-based technologies. As the miniaturization of devices pushes beyond traditional scaling limits, alternative materials—such as 2D materials, Germanium, III-V compounds, carbon, and graphene—are critical to overcoming challenges like short channel effects, high leakage currents, and power dissipation.
Targeted towards researchers, scientists, and postgraduate students, this book covers cutting-edge device architectures such as FinFETs, GAA-FETs, nanowires, CNTFETs, TFETs, FeFETs, HEMTs, and spin-based devices. It also details the modeling, simulation, and application-driven design for low-power, high-performance VLSI systems.
With clear explanations and in-depth analysis, this volume bridges the gap between traditional MOSFET fabrication and next-generation nanoelectronic design. Readers will gain a solid understanding of material properties, device behavior, and circuit co-design strategies, making it an essential resource for advancing chip design in the sub-micron era.
This book offers a comprehensive exploration of the design and technology of nanoscale semiconductor devices, with a special focus on novel materials and structures that address the limitations of conventional silicon-based technologies. As the miniaturization of devices pushes beyond traditional scaling limits, alternative materials—such as 2D materials, Germanium, III-V compounds, carbon, and graphene—are critical to overcoming challenges like short channel effects, high leakage currents, and power dissipation.
Targeted towards researchers, scientists, and postgraduate students, this book covers cutting-edge device architectures such as FinFETs, GAA-FETs, nanowires, CNTFETs, TFETs, FeFETs, HEMTs, and spin-based devices. It also details the modeling, simulation, and application-driven design for low-power, high-performance VLSI systems.
With clear explanations and in-depth analysis, this volume bridges the gap between traditional MOSFET fabrication and next-generation nanoelectronic design. Readers will gain a solid understanding of material properties, device behavior, and circuit co-design strategies, making it an essential resource for advancing chip design in the sub-micron era.
Explores cutting-edge 2D and III-V materials for high-performance nanoelectronic device design Covers advanced modeling techniques: analytical, numerical, compact, and custom device models Integrates novel nanoscale devices in sensor, memory, and analog VLSI circuit applications
Autor*in
Balwinder Raj
Themen in »Nanoscale Semiconductor Devices«
2D materials in nanoelectronics FinFET design and simulation nanoelectronic device modeling compact modeling of FETs III-V compound semiconductors high-k dielectric materials gate-all-around transistor graphene-based devices negative capacitance FET nano CMOS technology tunnel FET design nanowire FET simulation FeFET memory technology MEMS and nanosensors semiconductor device fabrication