The Physics of Semiconductors I
Fundamentals and Materials
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Beschreibung
The 5th Edition of this foundational textbook offers a comprehensive update on the principles and phenomena governing semiconductor physics and materials science, with a focus on contemporary research and advancements. Building on the success of previous editions, this book introduces essential concepts while incorporating cutting-edge topics and expanded discussions to reflect the latest developments in the field.
Volume I features detailed analyses of generalized LST relations for all crystal systems, discusses the role of epitaxial strain in material performance, and presents insights into irreducible Brillouin zones. New content highlights the significance of interface thermal conductivity, with GaN/diamond systems serving as a prime example, and explores diffusion mechanisms such as the Frank-Turnbull and kick-out models. Updated chapters provide simplified formulas for carrier statistics and discussions on two-band conduction in the valence band.
The volume also introduces advanced topics, including exciton binding energy in Si and Ge, the experimental application of ABC recombination models, and emerging materials. Enhanced references, such as Vegard's Law and pioneering studies like R.C. Jones' seminal work, offer a rich foundation for further exploration.
This updated edition is indispensable for students, researchers, and professionals seeking a robust introduction to semiconductor physics and materials science. Its integration of classical principles with contemporary advancements ensures it remains a definitive resource for both learning and reference.
The 5th Edition of this foundational textbook offers a comprehensive update on the principles and phenomena governing semiconductor physics and materials science, with a focus on contemporary research and advancements. Building on the success of previous editions, this book introduces essential concepts while incorporating cutting-edge topics and expanded discussions to reflect the latest developments in the field.
Volume I features detailed analyses of generalized LST relations for all crystal systems, discusses the role of epitaxial strain in material performance, and presents insights into irreducible Brillouin zones. New content highlights the significance of interface thermal conductivity, with GaN/diamond systems serving as a prime example, and explores diffusion mechanisms such as the Frank-Turnbull and kick-out models. Updated chapters provide simplified formulas for carrier statistics and discussions on two-band conduction in the valence band.
The volume also introduces advanced topics, including exciton binding energy in Si and Ge, the experimental application of ABC recombination models, and emerging materials. Enhanced references, such as Vegard's Law and pioneering studies like R.C. Jones' seminal work, offer a rich foundation for further exploration.
This updated edition is indispensable for students, researchers, and professionals seeking a robust introduction to semiconductor physics and materials science. Its integration of classical principles with contemporary advancements ensures it remains a definitive resource for both learning and reference.
Provides a thorough introduction to semiconductor physics and materials science, ideal for students and professionals Explores advanced materials such as Heusler semiconductors, Mott insulators, and GaN/diamond systems Features detailed discussions on interface thermal conductivity, diffusion mechanisms, and ABC recombination models
Autor*in
Marius Grundmann
Themen in »The Physics of Semiconductors I«
Electronic Defect States Optical Properties of Semiconductors Organic Semiconductors Polarized Semiconductors Semiconductor Nanostructures Epitaxial Strain Analysis Techniques Exciton Binding Energy in Silicon and Germanium Irreducible Brillouin Zone Calculations Mott Insulator Properties and Applications Two-Band Conduction in Valence Bands Interface Properties in GaN-Diamond Systems Heusler Semiconductors for Energy Applications Edge Emitter Wavelength Mode Distance Vegard's Law in Crystal Structures Generalized LST Relation for Crystal Systems