Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals
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Beschreibung
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.
Nominated as an outstanding Ph.D. thesis by the Universidad Complutense de Madrid, Madrid, Spain Provides basic research in a novel material based on silicon, which is later integrated into an industrial CMOS Image Sensor prototype Presents a methodology to combine two fast, non-destructive and reliable techniques to quickly identify the fast melting and solidification regimes after a nanosecond laser process
Autor*in
Daniel Montero Álvarez
Themen in »Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals«
Infrared Cmos Image Sensor Sub-bandgap Absorption Silicon Supersaturated Silicon Nanosecond Laser Annealing Short Wave Infrared Sensor Silicon Titanium Hyperdoped Silicon Room Temperature Infrared Photodiode Silicon Time-Resolved Reflectometry Supersaturated Silicon