Si Detectors and Characterization for HEP and Photon Science Experiment
How to Design Detectors by TCAD Simulation
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Beschreibung
This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation.
Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors.
The book is intended for researchers and master’s level students with an understanding of radiation detector physics. It provides a concept that uses TCAD simulation to optimize the electrical performance of the devices used in the harsh radiationenvironment of the colliders and at XFEL.
This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation.
Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors.
Discusses the physics and technology of the Si detector and its performance in the CMS experiment at LHC by the collaboration of radiation hard semiconductor devices for very high luminosity colliders (RD50) Introduces the experiments for radiation imaging with Si Pixel detectors at the European XFEL Provides step-by-step explanations of 2-D computer-based TCAD simulation to optimize the surface and bulk radiation hard design and its characterization on site
Autor*in
Ajay Kumar Srivastava
Themen in »Si Detectors and Characterization for HEP and Photon Science Experiment«
Si pixel detector high precision radiation hard detectors semiconductor radiation detectors designing pixel detectors High Luminosity Large Hadron Collider experiments CMS detector CERN RD50 collaboration surface radiation design pixel sensors TCAD LHC