Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
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Beschreibung
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
- Describes the evolution of MESFET in the semiconductor industry;
- Discusses challenges and solutions associated with downscaling;
- Provides comprehensive information on the structure and operation of silicon MESFETs.
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Describes the evolution of MESFET in the semiconductor industry Discusses challenges and solutions associated with downscaling Provides comprehensive information on the structure and operation of silicon MESFETs
Autor*in
Iraj Sadegh Amiri
Themen in »Device Physics, Modeling, Technology, and Analysis for Silicon MESFET«
MOS transistors SOI-MESFET silicon MESFET MESFET-CMOS Complementary SOI MESFETs