Fundamentals of Nanoscaled Field Effect Transistors

Beschreibung

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

In summary, this book:

Covers the fundamental principles behind nanoelectronics/microelectronics

Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale

Provides some case studies to understand the issue mathematically

Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Autor*in

Amit Chaudhry

Themen in »Fundamentals of Nanoscaled Field Effect Transistors«

Ballistic Effect Devices Biaxial Strained Si Technology Compact MOSFET Models Electron Devices MOSFETs at Nanoscale Nanoscale MOS Transistors Nanoscale MOSFET Transistor Quantum Effects

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