Transistor Level Modeling for Analog/RF IC Design
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Beschreibung
This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.
Brings together a variety of modeling techniques Treats models as well as methods of implementation Is a true in depth source for MOS-modelers
Autor*in
Wladyslaw Grabinski
Themen in »Transistor Level Modeling for Analog/RF IC Design«
Hardware Leistungsfeldeffekttransistor MOSFET Potential Standard VHDL Verilog analog field-effect transistor metal oxide semiconductur field-effect transistor model modeling semiconductor simulation transistor
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"A comprehensive book on state of the art emerging MOSFET models for the design and simulation of analog, digital or RF Integrated Circuits."
Narain Arora, Cadence Design Systems, California, USA
"This book covers modern topics in semiconductor TCAD, circuit simulation, compact models, RF modeling, etc. which are hard to find together anywhere else."
Peter Bendix, Xpedion Design Systems, California, USA
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