Silicon Carbide and Related Materials - 1999
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Beschreibung
Proceedings of the International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, Oct. 10-15, 1999
Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.
Autor*in
Trans Tech Publications Ltd
Themen in »Silicon Carbide and Related Materials - 1999«
4H-SiC 6H-SiC Annealing Chemical Vapor Deposition (CVD) Deep Level Defect Doping Epitaxial Growth Interface Interface States (or Traps) Ion Implantation Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Micropipe Ohmic Contact