Silicon Carbide, III-Nitrides and Related Materials
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Beschreibung
Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Stockholm, Sweden, September 1997
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.
Autor*in
Trans Tech Publications Ltd
Themen in »Silicon Carbide, III-Nitrides and Related Materials«
Annealing Atomic Force Microscope (AFM) Chemical Vapor Deposition (CVD) Defect Dislocation Epitaxy Gallium Nitride (GaN) Interface States (or Traps) Ion Implantation MBE MESFET Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Micropipe