Silicon Carbide and Related Materials 2007
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Beschreibung
Selected, peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Convention Hall, Lake Biwa Resort, Otsu, Japan, October 14 – 19, 2007
Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Autor*in
Trans Tech Publications Ltd
Themen in »Silicon Carbide and Related Materials 2007«
3C-SiC 4H-SiC 6H-SiC Basal Plane Dislocation (BPD) Channel Mobility Chemical Vapor Deposition (CVD) Defect Dislocation Gallium Nitride (GaN) High Voltage (HV) High-Temperature Interface States (or Traps) Ion Implantation