Stress-Induced Phenomena in Metallization
Ninth International Workshop on Stress-Induced Phenomena in Metallization
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Beschreibung
The conference was on reliability related science in ULSI interconnect. Its main purpose was to discuss the stress induced phenomena in the LSI interconnect among academic researchers and industry engineers to establish academic science and to improve the reliability of ULSI chips. All papers were peer reviewed.
Autor*in
Shinichi Ogawa
Themen in »Stress-Induced Phenomena in Metallization«
Characterization Diffusion Electro-migration Interconnect Low-k dielectrics Reliability Stress Stress induced voiding TDDB
Stimmen zu »Stress-Induced Phenomena in Metallization«
From the reviews:"An impressive work of research and collaborative presentation of papers on current research and thinking on issues related to stress-induced phenomena in metallization. There is much to admire here. … It is with great pleasure that materials and reliability researchers, and process engineers related to LSI interconnect fabrication, will turn to this latest volume. … All the papers are well supported by references and illustrations with plenty of tables, graphs half tones and line drawings all neatly executed." (Current Engineering Practice, 2008)
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