Alvin W. Strong Ernest Y. Wu Rolf-Peter Vollertsen Jordi Sune Giuseppe La Rosa Timothy D. Sullivan Stewart E. Rauch Strong Reliability Wearout Mechanisms in Advanced CMOS Technologies

Reliability Wearout Mechanisms in Advanced CMOS Technologies

von Alvin W. Strong Ernest Y. Wu Rolf-Peter Vollertsen Jordi Sune Giuseppe La Rosa Timothy D. Sullivan Stewart E. Rauch

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Beschreibung

A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: * Introduction to Reliability * Gate Dielectric Reliability * Negative Bias Temperature Instability * Hot Carrier Injection * Electromigration Reliability * Stress Voiding Chapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers.
A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent topics, the book covers: * Introduction to Reliability * Gate Dielectric Reliability * Negative Bias Temperature Instability * Hot Carrier Injection * Electromigration Reliability * Stress Voiding Chapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers.

Autor*in

Alvin W. Strong

Themen in »Reliability Wearout Mechanisms in Advanced CMOS Technologies«

CMOS Circuit Theory & Design Circuit Theory & Design / VLSI / ULSI Electrical & Electronics Engineering Elektrotechnik u. Elektronik Quality & Reliability Qualität u. Zuverlässigkeit Schaltkreise - Theorie u. Entwurf Schaltkreise - Theorie u. Entwurf / VLSI / ULSI Schaltkreistechnik Technische Zuverlässigkeit

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Details

ISBN: 9780471731726
Verlag: John Wiley & Sons
Erscheinung: 04.09.2009

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