Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications
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Beschreibung
Advanced Nanoscale ULSI Interconnects: Fundamental and Applications brings a comprehensive description of copper based interconnect technology for Ultra Large Scale Integration (ULSI) technology to Integrated Circuit (ICs) application. This book reviews the basic technologies used today for the copper metallization of ULSI applications: deposition and planarization. It describes the materials used, their properties, and the way they are all integrated, specifically in regard to the copper integration processes and electrochemical processes in the nanoscale regime. The book also presents various novel nanoscale technologies that will link modern nanoscale electronics to future nanoscale based systems. This diverse, multidisciplinary volume will appeal to process engineers in the microelectronics industry; universities with programs in ULSI design, microelectronics, MEMS and nanoelectronics; and professionals in the electrochemical industry working with materials, plating and tool vendors.
In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
The multidisciplinarity of this book makes it an especially valuable tool for those interested in ULSI Interconnects Includes supplementary material: sn.pub/extras
Autor*in
Yosi Shacham-Diamand
Themen in »Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications«
CMOS Wafer chemistry development electrochemistry integrated circuit interconnect manufacturing modeling nanotechnology scaling vapor