Physical Limitations of Semiconductor Devices
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Beschreibung
Physical Limitations of Semiconductor Devices provides an in depth understanding of the phenomena and regularities that play a critical role in the limitation of semiconductor device capabilities. It discusses how thermo-electrical breakdown, conductivity modulation, and electrical and spatial current instability phenomena affect the limitations of the devices. The authors give examples of the phenomena ranging from elementary semiconductor diode structures to discrete power and integrated components. They also show circuits both for silicon and compound semiconductor devices.
The material covers different levels of complexity including phenomenological, analytical, and numerical simulation. The material also explores the most complex phenomena of current filamentation and the impact of local structure defects, physical safe operating area limitations, and various scenarios of catastrophic failures in semiconductor devices. The emphasis of the book is on the physical approach to reliability assurance, safe operating area, and ESD problems.
Physical Limitations of Semiconductor Devices provides an important link between the theoretical aspects of the physics of semiconductor devices, non-linear physics, and the practical applications of microelectronics.
Since the beginning of semiconductor era in microelectronics the methodology of reliability assessment became a well established area. In most cases the reliability assessment involves statistical methods for safe operating area and long term re- ability parameters at the development of semiconductor processes, components and systems. At the same time in case of catastrophic failures at any development phase the major practical method is failure analysis (FA). However FA is mainly dealing with detection of consequences of some irreversible event that already happened. This book is focused on the most important and the less summarized reliability aspects. Among them: catastrophic failures, impact of local structural inhomo- neities, major principles of physical limitation of safe-operating area (SOA), physical mechanisms of the current instability, filamentation and conductivity modulation in particular device types and architectures. Specifically, the similar principles and regularities are discussed for elect- static discharge (ESD) protection devices, treating them as a particular case of pulsed power devices. Thus both the most intriguing applications and reliability problems in case of the discrete and the integrated components are covered in this book.
Provides the description and translation of cross-disciplinary phenomena for reliability assurance including circuit design, ESD design and TCAD simulation Applies directly to the area of ESD protection design Explains complex physical descriptions so that they can be applied to the decision making process
This book provides an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics. It delivers different levels of understanding of the physical phenomena that play a critical role in limitation of the semiconductor device capabilities, physical safe operating area limitation, and different scenarios of catastrophic failures in semiconductor devices. The book focuses on power semiconductor devices and self-triggering pulsed power devices for ESD protection clamps. Another unique aspect of the book is the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices. One of the major challenges the book covers is the gap in understanding of major physical regularities between the theoretical knowledge in the field of non-linier phenomena in semiconductors and the reliability and ESD protection problems in process and device development, circuit design, TCAD, and applications.
Autor*in
Vladislav A. Vashchenko
Themen in »Physical Limitations of Semiconductor Devices«
ESD Leistungsfeldeffekttransistor SOA Sinkevitch Transistor Vashchenko bipolar junction transistor bipolar power transistor catastrophic failures development electrostatic discharge field-effect transistor metal oxide semiconductur field-effect transistor safe-operating area semiconductors