B. Jayant Baliga Baliga Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices

von B. Jayant Baliga

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Beschreibung

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices.

Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses:


This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.


Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.  The treatment focuses on silicon devices and includes the  unique attributes and design requirements for emerging silicon carbide devices.


Provides extensive analytical formulations for design and analysis of structures

Includes numerical simulation examples to elucidate the operating physics and validate the models

Analyzes device performance attributes to allow practicing engineers in the industry to develop products

Presents a cohesive treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field


Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.



Autor*in

B. Jayant Baliga

Themen in »Fundamentals of Power Semiconductor Devices«

Leistungsfeldeffekttransistor Schottky rectifiers Thyristor Transistor bipolar junction transistor field-effect transistor metal oxide semiconductur field-effect transistor power electronics semiconductor devices silicon devices transport physics

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Details

ISBN: 9780387473130
Verlag: Springer US
Erscheinung: 05.09.2008

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